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svf1n60m/mj/n/b/d_datasheet 1a, 600v n-channel mosfet general description svfm/mj/n/b/d is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary f-cell tm structure vdmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc- dc converters and h-bridge pwm motor drivers. features ? 1a,600v,r ds(on) typ. =8.2 @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability nomenclature ordering information package marking material packing part no. svf1n60m to-251-3l svf1n60m pb free tube svf1n60m to-251d-3l svf1n60m pb free tube SVF1N60MJ to-251j-3l SVF1N60MJ pb free tube svf1n60n to-126-3l svf1n60n pb free bulk svf1n60b to-92-3l f1n60 pb free bulk svf1n60btr to-92-3l f1n60 pb free ammo svf1n60d to-252-2l svf1n60d pb free tube svf1n60dtr to-252-2l svf1n60d pb free tape & reel hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 1 of 11
svf1n60m/mj/n/b/d_datasheet hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 2 of 11 absolute maximum ratings (tc=25 c unless otherwise noted) rating characteristics symbol svf1n 60b svf1n 60m/d svf1n 60mj svf1n 60n unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v t c =25c 1.0 drain current t c =100c i d 0.63 a drain current pulsed i dm 1.5 4.0 a 9 28 29 25 w power dissipation(t c =25 c) -derate above 25 c p d 0.07 0.22 0.23 0.20 w/ c single pulsed avalanche energy (note 1) e as 52 mj operation junction temperature range t j -55 +150 c storage temperature range t stg -55 +150 c thermal characteristics rating characteristics symbol svf1n 60b svf1n 60m/d svf1n 60mj svf1n 60n unit thermal resistance, junction-to-case r jc 13.89 4.46 4.31 5 c/w thermal resistance, junction-to-ambient r ja 120 110 110 62.5 c/w electrical characteristics (tc=25 c unless otherwise noted) characteristics symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs =v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =0.5 a -- 8.2 11 input capacitance c iss -- 120.3 -- output capacitance c oss -- 19.0 -- reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 0.8 -- pf turn-on delay time t d(on) -- 6.47 -- turn-on rise time t r -- 13.27 -- turn-off delay time t d(off) -- 7.73 -- turn-off fall time t f v dd =300v,i d =1.0a, r g =25 (note 2,3) -- 15.87 -- ns total gate charge q g -- 3.45 -- gate-source charge q gs -- 1.10 -- gate-drain charge q gd v ds =480v,i d =1.0a, v gs =10v (note 2,3) -- 1.39 -- nc
svf1n60m/mj/n/b/d_datasheet source-drain diode ratings and characteristics max. characteristics symbol test conditions min. typ. svf1 n60b others unit continuous source current i s -- -- 1.0 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 1.5 4.0 a diode forward voltage v sd i s =1.0a, v gs =0v -- -- 1.5 v reverse recovery time t rr -- 246.08 -- ns reverse recovery charge q rr i s =1.0a, v gs =0v, di f /dt=100a/s(note 2) -- 0.53 -- c notes: 1. l=30mh i as =1.74a, v dd =85v, r g =25 ,starting t j =25 c; 2. pulse test: pulse width 300 s,duty cycle 2%; 3. essentially independent of operating temperature. typical characteristics hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 3 of 11 drain current ? i d (a) drain current ? i d (a) reverse drain current ? i dr (a) drain-source on-resistance ? r ds(on) ( ? )
svf1n60m/mj/n/b/d_datasheet typical characteristics continued figure 5. capacitance characteristics figure 6. gate charge characteristics hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 4 of 11 0.8 0.9 1.1 1.0 -100 -50 0 50 100 200 junction temperature ? t j (c) figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature junction temperature ? t j (c) 1.2 150 notes: 1. v gs =0v 2. i d =250a 0.0 0.5 2.0 1.5 -100 -50 0 50 100 200 3.0 150 1.0 2.5 notes: 1. v gs =10v 2. i d =0.5a figure 9-1. max. safe operating area(svf1n60b) drain source voltage - v ds (v) figure 9-2. max. safe operating area(svf1n60m/mj/d) 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 drain source voltage - v ds (v) 10 1 notes: 1.t c =25c 2.t j =150c 3.single pulse dc 10ms 1ms 100s operation in this area is limited by r ds(on) 0 01 2 4 total gate charge ? q g (nc) note: i d =1.0a v ds =480v v ds =300v v ds =120v 2 4 6 8 10 12 3 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 10 1 dc 10ms 1ms 100s operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse 0.1 1 10 100 drain-source voltage ? v ds (v) 0 50 100 200 250 300 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd c iss c oss c rss notes: 1. v gs =0v 2. f=1mhz 150
svf1n60m/mj/n/b/d_datasheet typical characteristics continued figure 9-3. max. safe operating area(SVF1N60MJ) figure 9-4. max. safe operating area(svf1n60n) hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 5 of 11 25 50 75 100 125 150 0 0.2 0.4 0.6 1.0 drain current - i d (a) case temperature ? t c (c) figure 10. maximum drain current vs. case temperature 0.8 drain current - i d (a) 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 drain source voltage - v ds (v) 10 1 drain current - i d (a) 10 -2 10 -1 10 0 10 0 10 1 10 2 10 3 drain source voltage - v ds (v) 10 1 operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse dc 10ms 1ms 100s notes: 1.t c =25c 2.t j =150c 3.single pulse operation in this area is limited by r ds(on) 100s 1ms 10ms dc
svf1n60m/mj/n/b/d_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 6 of 11 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
svf1n60m/mj/n/b/d_datasheet package outline to-252-2l(1) unit: mm to-252-2l(2) unit: mm hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 7 of 11
svf1n60m/mj/n/b/d_datasheet package outline (continued) to-251-3l unit: mm to-251d-3l unit: mm 6.60 0.10 2.30 0.10 hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 8 of 11 0.76 0.10 5.10 5.46 0.46 0.58 2.2860.10
svf1n60m/mj/n/b/d_datasheet package outline (continued) to-251j-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 9 of 11 2.18 2.39 0.46 0.89 0.46 0.61 2.29typ 6.35 6.73 4.95 5.46 0.64 0.89 0.89 1.14 to-126-3l unit: mm
svf1n60m/mj/n/b/d_datasheet package outline (continued) to-92-3l(1) unit: mm to-92-3l(2) unit: mm 3.500.30 1.300.25 0.450.20 4.60.3 hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 10 of 11 14.00.5 14.30.5
svf1n60m/mj/n/b/d_datasheet hangzhou silan microelectronics co.,ltd rev:1.4 2012.06.04 http://www.silan.com.cn page 11 of 11 disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manuf acturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers! attachment revision history date rev description page 2011.03.30 1.0 original 2011.06.29 1.1 add the package of to-251d-3l, to-251j-3l, to-126-3l 2011.09.02 1.2 modify ?package outline? 2011.12.31 1.3 modify ?electrical characteristics? and the capacitance characteristic curve; modify the i dm of svf1n60b 2012.06.04 1.4 modify the value of ?reverse recove ry time?; update the package outline of to-251d-3l

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